| 摘要 |
PURPOSE:To reduce the unbalanced voltage as well as to lessen the drift of this voltage for the titled converting element by a method wherein an N type or P type magnetoelectricity conversion working layer is formed on a GaAs substrate and, in the case where an element is constructed in such a manner that a metal electrode is connected to the end part of the working layer, a high density region consisting of the impurities same as those of the working layer is provided between the working layer and the electrode. CONSTITUTION:After a negative type photoresist has been rotary-painted on a Cr- doped GaAs insulated substrate 1, an aperture is provided, and an N type magnetoelectricity conversion working layer 2 is formed by performing an Si<+> ion implantation. Then, an aperture is provided again by renewing the photoresist, an Si<+> ion is implanted in the same manner, and an N<+> type layer 9 is formed in the substrate 1 including the end part 2' of the layer 2. Subsequently, an SoP2 film is covered on the whole surface, a window is provided at the part 7 where ohmic contact with the electrode metal will be formed, and an AuGe electrode 3 is adhered on the end part 2 through the layer 9. Thus the conductivity of the layer 9 located below the electrode 3 is increased and the influence of crystal effect is reduced by having a uniform ohmic contact on the interface between the layrs 9 and 2. |
