发明名称 FILLING METHOD FOR REACTIVE GAS FOR SEMICONDUCTOR
摘要 PURPOSE:To prevent any contamination, by opening one of a pair of stoppers of a vessel to introduce a high-purity H2 thereinto; heating the vessel above a specific temperature; opening the other stopper to reduce the pressure in the vessel; removing the residual oxygen or oxides; and filling the vessel with a reactive gas for a semiconductor. CONSTITUTION:One of a pair of stoppers of a heat-resistant corrosion-resistant hermetically-sealed high-pressure vessel is opened to introduce a high-purity H2 thereinto from the bottom thereof. The vessel is heated to 200-350 deg.C. The other stopper is opened to evacuate the vessel to about 10<-7>-10<-9>Torr. In this case, the reverse diffusion of the vacuum-pump oil is prevented, and no residual oxygen, water and hydrocarbon are present in the vessel. Therefore, when the vessel is filled with a reactive gas, which is purified by removing therefrom heavy metals, water and oxide impurities, no contamination occurs.
申请公布号 JPS58209114(A) 申请公布日期 1983.12.06
申请号 JP19820092612 申请日期 1982.05.31
申请人 HANDOUTAI ENERUGII KENKYUSHO:KK 发明人 YAMAZAKI SHIYUNPEI
分类号 H01L31/0248;H01L21/205;H01L31/04 主分类号 H01L31/0248
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