发明名称 FORMING METHOD FOR RESIST PATTERN
摘要 PURPOSE:To obtain the resist pattern in which a resist does not remain in an end edge by using two masks each regulating the longitudinal and lateral sizes of a rectangular pattern. CONSTITUTION:Cr patterns 14, 15 are formed onto a glass substrate 13, and the masks 11, 12 regulating the longitudinal and lateral size of the patterns are manufactured. The masks of the rectangular patterns are superposed, and mask patterns according to a predetermined design are obtained. When the resist is exposed by the masks of the rectangular patterns, the edges of the patterns are hardly exposed by a proximity effect because exposure regions and non-exposure regions are in contact at the angles of 180 deg. in designed pattern sections. Accordingly, the edge sections of designed patterns are not exposed even through exposure by the mask 12 in succession to the mask 11, and the resist patterns for forming minute connecting holes can be formed through development.
申请公布号 JPS58209124(A) 申请公布日期 1983.12.06
申请号 JP19820092871 申请日期 1982.05.31
申请人 TOKYO SHIBAURA DENKI KK 发明人 SAIGOU TAKASHI
分类号 G03F7/20;H01L21/027 主分类号 G03F7/20
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