| 摘要 |
PURPOSE:To obtain a magnetic bubble element having a common operating margin and large bubble transfer path and a soft magnetic substance transfer path, by forming the 1st transfer path with a different ion implantation, after another ion implantation is done on the magnetic substance film. CONSTITUTION:Ne ions are implanted on the magnetic substance film 1 by providing a photo resist 8 of metal or insulating layer for a part forming an ion implantation transfer path on the surface of garnet, then an ion implantation layer 7 is formed in a desired thickness at a part not covered with the resist 8. Further, in forming a magnetic bubble transfer path and a ''Permally'' transfer path with a conventional ion implantation, the common region for the ion implantation transfer path and the ''Permalloy'' transfer path having a broad common bias margin is increased with the adjustment by means of the desired different ion implantation. Thus, the high performance magnetic bubble element having a large bubble transfer path and soft magnetic substance transfer path and a common operating margin is obtained. |
