| 摘要 |
PURPOSE:To obtain a vapor growth device of small power consumption and low operating cost by a method wherein wafer holding bases are supported in a rotary tube provided inside a reaction tube, and these holding bases are heated by resistance heating due to direct conduction. CONSTITUTION:Semiconductor wafers 8 are held on the outside surfaces of the holding bases 7 in the reaction tube 1, and then hydrogen gas is introduced from reaction gas inlets 2 provided at several points on the side part of the reaction tube 1 into the tube, and heated while rotating the rotary tube 4, the holding bases 7, the semiconductor wafers 8, and electrodes 9 by a motor 5 alternately to the right and left directions of rotation, and thereafter reaction gas is introduced and exhausted from an exhaust port 3. In this case, since the reaction gas is introduced from the direction approximately rectangular to the array of the semiconductor wafers 8 on the holding bases 7, and exhausted to the opposite side, and besides the reaction gas inlets 2 are provided at several points on the side part of the reaction tube 1, Si layers having uniform film thickness are formed on the semiconductor wafers 8. The holding bases 7 are heated by resistance heating due to direct conduction to the holding bases 7 from the electrodes 9 via an electrode lead-out member 10 by the power source, therefore thermal efficiency is good, the power consumption can be largely reduced, and accordingly the operating cost can be saved. |
