| 摘要 |
PURPOSE:To obtain a semiconductor device having a high integration density and less manufacturing error by employing meandering form of the first and second polycrystalline silicon resistance materials. CONSTITUTION:The first polycrystalline silicon resistance material 6 and the second polycrystalline silicon resistance material 7 formed on the oxide film 8 on silicon substrate 9 are patterned using the photo etching technology, and an oxide film is formed through thermal oxidation. Thereafter, a contacts 3 and 4 are opened, and a combined resistance material is formed by the leadout conductors 1 and 2 and mutual connecting conductor 5. The resistance materials 6, 7 are respectively provided adjacently at the linear part and these are overlapped through an insulating film at the meandering part. Therefore, the interval required for preventing short-circuitting due to whisker of polycrystalline silicon is no longer necessary and it is also unnecessary to prepare a semiconductor device in wider area. Since an oxide film 10 is provided, electrical continuity is not generated between the first and second polycrystalline silicons and thereby, about doubled resistance can be formed in the same area. |
