| 摘要 |
PURPOSE:To eliminate the influence by H2 gas onto element parts by a method wherein an Si nitride film rich in silicon is grown on a semiconductor substrate by a plasma vapor growing method, then an Si nitride film approximate to a trisilicon tetranitride is grown thereon by a plasma vapor growth method, and a cover film composed of a double layer is formed. CONSTITUTION:As the cover film, first an SiXNY film (X>Y) 4 is adhered to the thickness approx. 500-1,000Angstrom , and, for the purpose, the film is grown and adhered by the plasma vapor growth method wherein the mixture gas of SiH4 gas and hydrogen (H2) gas is heated to approx. 400 deg.C. The use of such an H2 gas enables to extremely reduce the content of H2 gas. Next, the Si3N4 film 5 of film thickness 0.5-1mum is grown and adhered by a plasma vapor growth method by heating in the same manner by using the mixture gas with SiH4 gas and NH3 gas. Then, even when some H2 gas is contained in the Si3N4 film 5 of the upper layer, it is blocked by the SiXNY film 4, accordingly the intrusion of H2 gas into the substrate is prevented. |
