| 摘要 |
PURPOSE:To realize high speed operation and high integration density by configurating an emitter diffusion mask formed on the surface of base/emitter junction with a thin semiconductor oxide film and a polycrystalline semiconductor film and by forming the peripheral part of emitter contact with said mask itself. CONSTITUTION:An insulating film in the vicinity of emitter contact part including the area on the base-emitter junction is composed of a thin semiconductor oxide film (SiO2 film) and a polycrystalline semiconductor film (poly-Si film) 7 is formed thereon. A semiconductor oxide film 6 is formed simultaneously with a gate insulating film of MOSFET in a bipolar MOSIC and a polycrystalline semiconductor film 7 is formed simultaneously with a poly-Si gate in a bipolar IC. The thin oxide film 6 and polycrystalline semiconductor film 7 are used as the diffusion mask for N<+> diffusion and also become the contact windows of emitter. Thereby, leaks of phosphorus, defect due to the exposure of the emitter- base junction can be eliminated and error in mask positioning can also be reduced. |
