发明名称 PREPARATION OF THIN FILM SEMICONDUCTOR DEVICE
摘要 PURPOSE:To effectively produce a large amount of semiconductor elements by isolating them produced by the batch system on a large area substrate from the substrate using metallic molds. CONSTITUTION:With a substrate 1 having the sufficient area enough for producing a plurality of solar battery elements consisting of a metal plate such as stainless steel, aluminum and a hard plate consisting of flexible resin film or glass epoxy phenol resin used as a supporting plate, an amorphous Si layer 2 is deposited on the surface of such supporting plate by plasma discharge. Then, transparent conductive film 3 is vacuum-deposited corresponding to each element position on the amorphous Si layer 2 and moreover a resin 4 is coated in view of protecting element from atmospheric air or impact. The resin 4 is coated by previously removing a part of the collector electrode 5 provided in order to obtain an output and a conductive material such as silver paste is printed as the collector electrode 5. Respective element can be separated from the substrate by punching them after setting the substrate 1 between the top force 6 and bottom force 7. A small size element can be produced easily by this method.
申请公布号 JPS58207680(A) 申请公布日期 1983.12.03
申请号 JP19820091072 申请日期 1982.05.27
申请人 SHARP KK 发明人 FUJIWARA YOSHIKAZU
分类号 H01L31/042;H01L31/0392 主分类号 H01L31/042
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