| 摘要 |
PURPOSE:To form ohmic contact electrodes with a stably low resistance value and good reproducibility by a method wherein a film containing the impurity which inputs one conductivity type characteristic to a compound semiconductor region is formed on the region to form the electrode of the compound semiconductor region having one conductivity type characteristic then energy rays which are absorbed selectively by the film are irradiated onto the film. CONSTITUTION:After implanting Si ions into the surface of a semi-insulating GaAs substrate 1 by ion implantation, and thus providing a protection film 3 due to Si dioxide, an N type conduction layer 2 is formed by performing heat treatment in hydrogen atmosphere. Next, a resist 4 having apertures at the position wherein the ohmic contact electrodes are formed is formed, then apertures are provided through the protection film 3 via the resist 4, and the Ge film 5 is formed without removing the resist 4, thereafter the pattern due to the Ge film 5 is arranged by removing the resist 4. Then, the irradiation of energy rays is performed. Where, it is necessary that the irradiated energy rays are sufficiently absorbed into the Ge film 5, and, for example, Nd YAG pulse laser light of wavelength lambda=1.06mum and pulse width 1mus approx. or less is irradiated through the back surface of the substrate. |
