| 摘要 |
PURPOSE:To obtain an inverter circuit having less fluctuation of input blind sector with respect to the fluctuation in the power supply voltage, by connecting an FET of a C-MOS inverter to an FET of the same conduction type in series and conducting the FET at the saturated region. CONSTITUTION:The C-MOS inverter circuit is constituted with a P channel CHFETQ2 and an NCHFETQ3, a drain of the PCHFETQ1 is connected to the source of the Q2, a power supply VCC is connected to the source of the Q1, and the gate is connected to a constant voltage source having a prescribed difference to the VCC. In the constant voltage source, PCHFETs Q4, Q5, and a resistor R are connected in series between the power supply VCC and the ground, the R is selected to a resistance value very larger than that of the Q4, Q5 in operation and a constant voltage is obtained at a connecting point between the Q5 and the R. Thus, the Q1 is operated at the saturated region, the resistance in operation of the Q2 is very smaller than that of the Q1, and an output voltage Vout depends on the resistance ratio of the Q1 and Q3 in operation. Further, the current of the Q1 is constant independently of the fluctuation in the Q1, the Q1 has a nearly constant current characteristic, and the fluctuation in the input blind sector is less. |
