| 摘要 |
PURPOSE:To increase the thickness and growth rate of the silicon nitride film by adding at least one kind of diborane, phosphine and arsine to a nitriding gas when a silicon substrate is nitrified directly and the silicon nitriding film is formed. CONSTITUTION:The silicon nitride film is indispensable on the formation of a planar type element as an oxidation-resisting mask in a method forming a semiconductor device. Nitrogen, ammonia and hydrazine are considered as the nitriding gas. When diborane is added to ammonia at content within a range of 1ppm from 1%, the growth rate of the silicon nitride film is increased by 20-50% more than the case of no addition of diborane when the substrate is nitrified under a pressed state in which gas pressure is brought to one atmosphere or more at a temperature of 600-1,200 deg.C, and the film up to approximately 300Angstrom thickness can be formed through a pressure method and the film up to approximately 1,000Angstrom thickness through a plasma method. |
