| 摘要 |
PURPOSE:To obtain a high sensitive photoelectric converter having the large ratio of photocurrent vs. dark current at the photoelectric converter having a photoconductive film by a method wherein film thickness of the photoconductive film is selected at the specified value. CONSTITUTION:A photoelectric converter is constructed using the photoconductive film having a cadmium selenide or a cadmium sulfied as the component. Film thickness of the photoconductive film is limited to 0.2-1mum. By constructing the device by this way, because the photocurrent, which is output of an element, can be enlarged, and moreover because the dark current can be reduced, the element can be formed to have high sensitivity enlarging the ratio of photocurrent vs. dark current. |
