| 摘要 |
PURPOSE:To maintain a protective effect against external pollutions, and to prevent degradation for a prolonged term of the characteristics of a semiconductor element by connecting a semiconductor chip to a substrate to a lead-frame, etc. and forming a silicon oxide-nitride film to the surface of the substrate to be assembled. CONSTITUTION:The semiconductor element 1 is bonded with the lead-frame while being connected by gold lead wires 3. The surface of the substrate assembled is coated with the silicon oxide-nitride film 4 in approximately 0.5mum thickness, and the surface of the film 4 is resin-molded with an epoxy-resin 5, etc. The silicon oxide-nitride film is coated through a photochemical evaporation method while a mixed gas of monosilane gas and oxygen gas or oxygen nitride gas and ammonia gas is irradiated by ultraviolet rays in a reaction chamber with a quartz window under pressure as heating the substrate. |
