| 摘要 |
PURPOSE:To enable to form a field oxide film thin, and to simplify the manufacturing process of the device by a method wherein an impurity region having the inverse conductive type from a substrate, and moreover having the extent to accommodate entirely a bonding pad is formed in the surface layer of the substrate. CONSTITUTION:At a field region to be formed with the bonding pad, the P<+> type impurity region 12 having the extent to accommodate entirely the bonding pad 14 is formed in the surface layer of the N type silicon substrate 11. Then the field oxide film 13 to cover the whole surface of the field region is formed on the region 12 according only to thermal oxidation. After then, the bonding pad 14 manufactured of aluminum is formed on the oxide film 13. |
