| 摘要 |
PURPOSE:To obtain the MOS type linear resistor having linear characteristics depending upon no drain voltage by connecting the same type MOS transistor in series with an MOS transistor, a gate and a drain thereof are connected, and using both ends as resistance terminals. CONSTITUTION:A gate 2 and a drain 3 are connected to a first P type MOS transistor 1, and the source 5 of a second P type MOS transistor 4 is connected at a node of the gate and the drain. Voltage VB is applied to the gate 6 of the transistor 4 by a bias power supply 7. A voltage source 10 is connected between the source 8 of the transistor 1 and the drain 9 of the transistor 4 to apply voltage VDD, and operated as an MOS resistor using the source 8 and the drain 9 as both ends. The MOS resistor R1+R2, drain-voltage dependency thereof is extremely small, is obtained because the change of MOS resistor R2 consisting of the transistor 4 works to the change of MOS resistor R1 consisting of the transistor 1 in a compensatory manner. |
