发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To enable to set the oscillation wavelength as desired for the titled semiconductor laser device by a method wherein the threshold value of laser oscillation is determined by the first waveguide, having a pair of reflecting mirror facing each other using a cleavage plane, and at the same time, the second waveguide path having a diffraction grating consisting of cyclicly rugged surface is provided. CONSTITUTION:Reflection mirrors 2 and 3 are formed at both ends of the first photo waveguide 1 using a cleavage and the like, a cyclic roughened face 5 is formed on the surface of the second photo waveguide 4, and these waveguides 1 and 4 are electromagnetically and optically coupled each other using a branching point 6. As this device is a kind of composite resonator, it is expected that its laser oscillation is generated at the resonator of the reflecting mirror 2 and 3 having a low threshold value and , in that case, the light is partially led to a distribution reflector through the intermediary of the branching point 6. The composition of the reflected light coming from the distribution reflector has oscillation wavelength of the first waveguide 1, and yet it is oscillated at the wavelength which will be determined by the frequency of diffraction grating 5.
申请公布号 JPS58206183(A) 申请公布日期 1983.12.01
申请号 JP19820088820 申请日期 1982.05.27
申请人 KOGYO GIJUTSUIN (JAPAN) 发明人 UEMATSU YUTAKA
分类号 H01S5/00;H01S5/10;H01S5/125 主分类号 H01S5/00
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