发明名称 Process for producing at least one Josephson tunnel element with connecting leads
摘要 In the process for producing at least one Josephson tunnel element containing superconducting layers, deposited on a substrate, of a base electrode and a counterelectrode and a layer of a tunnel barrier between the electrode layers, a hole mask of a predetermined thickness and having a hole structure matched to at least one tunnel device to be produced is first arranged on the substrate. Then the layers of the electrodes are vapour-deposited by oblique vapour deposition in an uninterrupted vacuum process and the tunnel barrier layer is formed between these vapour-deposition steps. In addition, connecting leads for at least one tunnel element are produced. According to the invention, a hole mask (2) provided not only with a hole (3) for forming the tunnel element (27) but with channel-type openings (6, 7) matching the connecting leads (28, 29) is deposited on the substrate (14). A bridge (8, 9) having a dimension (a) which is dependent on the direction of vapour deposition is formed in each case between the at least one hole (3) of the tunnel element (27) and the openings (6, 7) of the connecting leads (28, 29). Furthermore, according to the invention, the layer (20) of the tunnel barrier is formed in a direction perpendicular to the surface of the substrate (14). <IMAGE>
申请公布号 DE3220251(A1) 申请公布日期 1983.12.01
申请号 DE19823220251 申请日期 1982.05.28
申请人 SIEMENS AG 发明人 HOENIG,ECKHARDT,DR.
分类号 H01L39/24 主分类号 H01L39/24
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