| 摘要 |
PURPOSE:To reduce grounding impedance, and to form the device in a small type by a method wherein the electrode of an FET is connected to a low resistance semiconductor substrate along the wall face of an opening provided in a high resistance buffer layer reaching the substrate surface. CONSTITUTION:A high resistance buffer layer 13 is provided on the high concentration N type GaAs substrate 12. The source electrode 3' is provided along the opening 14 provided in the buffer layer 13 and is connected to the substrate 12. Moreover, ions are implanted from the surface of a part of the substrate 12 to form an active layer 2. Then a drain electrode 4 to form ohmic contact with the active layer 2 and a gate electrode 5 to form Schottky junction with the layer 2 are formed. An insulating film 7' is formed along an opening 15 dug at the different place from the opening 14, and a metal film 8' to constitute an MIS capacitor is provided to be connected to the electrode 4. |
