| 摘要 |
PURPOSE:To obtain the high reliable semiconductor device generating no contact between the emitter electrode and emitter-base junction of the device by a method wherein holes having different diameters are formed in a two layer structural surface protective film, and the emitter electrode is formed utilizing the holes thereof. CONSTITUTION:After a first and second insulating films 12, 13 are formed in order on a first conductive type semiconductor layer 11, a second conductive type impurity region 14 is formed by ion implantation. Then, after a first opening 15 is formed in the second insulating film 13 at the part corresponding to the upper part of a part of the region 14, a second hole 16 having the diameter larger than the first opening 15 is formed in the first insulating film 12. After then, a first conductive type semiconductor film 17 is formed at the lower part of the eaves part 13a of the second insulating film 13. Then, second conductive type impurity ions are implanted by energy not to transmit the insulating films 12, 13 to diffuse impurities in the semiconductor layer 17, and a first conductive type impurity region 18 is formed. The emitter electrode is formed on the region 18 thereof. Accordingly, the semiconductor device generating no contact of the emitter electrode with the junction part between the emitter 18 and the base 14 can be obtained. |
