| 摘要 |
PURPOSE:To obtain a resist suitable for manufacturing LSI, etc., high in resolution, and superior in adhesion to a base, by adding polyhydroxy-alpha-methylstyrene or hydroxyalpha-methylstyrene copolymer and a quinonediazide compd. CONSTITUTION:A homo- or co-polymer of hydroxy-alpha-methylstyrene having recurring units represented by the formula and a quinonediazide compd. are contained as a photosensitive agent in a positive type photoresist or further, novlak resin is added to ths compsn. A silicon wafer is coated with one of both compsn., dried, irradiated with UV rays or the like, and developed with an aq. alkali soln. The obtained pattern has about 1mum width and high resolution, and further, it can form a mask superior in adhesion to the wafer, suitable for fabrication of LSI. The hydroxy-alpha-methylstyrene (co)polymer has good adhesion and gives a soft film free of pinholes, and covers the defects of the novolak resin. |
