| 摘要 |
In a bipolar integrated circuit, wherein the elementary components are formed in islands of an N-type epitaxial layer surrounded by P-type isolation walls, a protection against leakage currents is obtained by surrounding an island susceptible to receive negative voltage surges with an annular island. The isolation wall between the considered island and the annular island is connected to the potential of the most negative supply source and the isolation wall external to the annular island is connected thereto. |
