Metallisation production on especially III-V semiconductor body

摘要

A method of producing a semiconductor body having a metallisation layer involves dry etching (5) at least a surface region of the semiconductor body (1) and then applying the metallisation layer (2) onto the surface region. Preferably, the dry etching (5) comprises a plasma etching operation, especially in which the surface is bombarded with Ar ions and in which the surface region is roughened.