| 摘要 |
PURPOSE:To introduce unformly the component of a modifying gas to a vapor- deposited film, to facilitate the stable introduction of the gas, and to reduce film contamination by emitting electron rays to a base body to be vapor deposited in a vapor deposition tank, and activating the modifying gas existing at the vicinity of the base body. CONSTITUTION:An evaporation source 2 that contains a vapor-deposited substance such as silicon and a base body 1 to be vapor-deposited such as glass that faces the evaporation source 2 are placed in a vapor deposition tank 3, and the evaporation source 2 is heated in the presence of a modifying gas such as hydrogen supplied into the tank 3 from a modifying gas inlet provided in the tank 3, and the substance is vapor-deposited on the base body 1. In this device, an electron ray supplying device 10 that emits electron rays to the base body 1 to activate or ionize the modifying gas which present at the vicinity of the base body is installed in the vapor deposition tank 3. Consequently, the component of the modifying gas such as hydrogen ions is introduced easily and uniformly into a vapor deposited film, and film contamination is reduced. |
