| 摘要 |
PURPOSE:To contrive to improve the reliability of an element by preventing the decrease of threshold voltages by a method wherein the periphery of an element forming region is partially oxidized after burying a field insulation film. CONSTITUTION:An oxidation resistant film (SI3N4 film) 23 is formed on a Si substrate 21 via a thermal oxide film 22, and further an Al film 24 serving as a lift-off material is formed. These films are patterned by reactive ion etching, etc., thus a groove is formed on the substrate 21, and thereafter the first insulation film (SiO2 film) 271 is formed. Next, after a part of the insulation film 271 is removed by performing etching and lift-off, the second insulation film (SiO2 film) 272 and a fluid substance film 29 are formed. Then, the entire surface is uniformly etched, and then the SiO2 film 27 is buried into the field region flat. Threafter, the periphery of the element region is oxidized by heat-treatment in an oxidizing atmosphere, and thus changed into the state that a SiO2 film 30 slightly bites from the end part of the Si3Ni4 film 23. Afterwards, the element is formed by removing the Si3N4 film 23.
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