| 摘要 |
PURPOSE:To stabilize a connecting surface between a CVD lower-layer insulating film and a silicon layer by using a thermal oxide film laid to the lower section of a mask pattern for an oxidation-resisting film and a thermal oxide film for absorbing an ion shock as the underlay thermal oxide film of the lower-layer insulating film. CONSTITUTION:The oxidation-resisting film pattern 6, a lower section thereof has a first thermal oxide film 4 and an upper section thereof has an impurity introduction preventive film 5, is formed onto a semiconductor base body, and a second thermal oxide film is formed selectively to a base-body surface exposed. An impurity is introduced selectively, the surface of a semiconductor layer in a plurality of regions demarcated to the oxidation-resisting film pattern 6 is exposed, and the third thermal oxide film 13 for absorbing the ion shock is formed. The impurity is introduced by an ion implantation means through the third thermal oxide film 13, the oxidation-resisting film pattern 6 is removed together with the impurity introduction preventive film of the upper section of the pattern, and the lower-layer insulating layer 17 consisting of a chemical vapor growth film is formed onto the first thermal oxide film 4 and the third thermal oxide film 13. |
