| 摘要 |
PURPOSE:To make it possible to carry out sputtering processing in high preciseness and good reproducibility, in an ion beam processing apparatus, by providing a means for monitoring charged particles to detect the processing finish point of an object to be processed. CONSTITUTION:Ion beams 2 are focused and irradiated to the black defect 5 of a mask 6 fixed on a sample table 7 and said defect 5 is removed by sputtering processing. In this case, secondary electrons 8 discharged from the defect 5 are detected by a secondary electron detector 10 to be monitored. The signal from a lock-in amplifier 11 is superposed to the potential of a lead-in electrode 9 or the sample table 7 and only a signal synchronous to said signal is withdrawn from the detected signal of the secondary electrons 8 while the differentiation value of the count numbers of the secondary electrons 8 is used as the signal in terminal detection. The judgement for the processing finish is carried out by a controller 12 and blanking electrode control 13 receiving said signal applies voltage to a blanking electrode 14. By this method, the ion beams 2 are stopped down by an aperture 3 to be deflected and removed from the mask 6. |
