| 摘要 |
PURPOSE:To prevent loss by reflection in case of the projection of beams from the surface of an element by forming a first Schottky barrier and a second Schottky barrier, increasing an effective area of the element and forming an antireflection film onto silicon. CONSTITUTION:Both a first Schottky junction 3 and a second Schottky junction 7 are brought to a reverse bias state. Beams projected from the side where there is the junction 7 pass through the antireflection film 8, and trasmit a polycrystalline silicon film 6 under the state in which loss by reflection is minimized, and electron-hole pairs are formed in a metallic electrode 2. There are also holes crossing and flowing through the second Schottky barrier 7 in the same manner as holes crossing and flowing through the first Schottky barrier 3 because said hole move in all directions. Accordingly, the whole photocurrents I are the sum of currents I1 flowing through the first Schottky barrier 3 and currents I2 flowing through the second Schottky barrier 7. |
