| 摘要 |
A process for electrolessly depositing platinum on silicon surfaces is carried out with a plating bath containing Pt<4+> ions. The plating bath is prepared by dissolving a suitable platinum compound, such as PtF4, PtCl4 or H2PtCl6 and then adding HF to obtain the desired acidity. In addition, NH4Cl or NH4F may optionally be added to the plating bath to stabilise the H<+> ion concentration and to increase the platinum deposition rate. The process is suitable for producing ohmic contacts between platinum and silicon for semiconductor components. <IMAGE>
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