| 摘要 |
PURPOSE:To contrive to have high reliability and good characteristic and thus attain high integration by a method wherein the ratio of composition of metal and silicon in a metal silicide of high melting point is defined as a specific ratio and put into a part of mutual wirings. CONSTITUTION:After a thermal oxide film is formed on a P type Si substrate 11, a field oxide film 12 is formd by etching, thermal oxidation treatment is performed, and thus a thin thermal oxide film 13 is formed on the surface of the substrate 11. Next, an impurity region 15 is formed after removing the thermal oxide film 13 with a photo resist pattern 14 as the mask. After removing the pattern 14, the molybdenum silicide film 16 wherein the ratio of composition of molybdenum and silicon is in the range of 1:2-1:3 is adhered. Then, etching is performed with a photo resist pattern not shown in the figure as the mask, thus the film 16 is patterned, and accordingly a wiring 18 which contacts directly a gate electrode 17 and the impurity region is formed. The specific resistance of the wiring 18 is small, and the reliability is high. |
