发明名称 POWER SOURCE CIRCUIT FOR SEMICONDUCTOR STORAGE DEVICE
摘要 <p>PURPOSE:To prevent an outputting circuit of a sense amplifier from being influenced by a voltage drop of a Vcc line, and also, to increase the degree of freedom of a layout of the sense amplifier, by taking in directly a voltage supplied to a data outputting circuit of the sensor amplifier which has been provided for every bit, from a power source connecting area. CONSTITUTION:Bases of transistors Q1-Q4 are connected directly to a Vcc power source connecting area 12 through a resistance 3 of a power source circuit, and to the bases of the transistors Q1-Q4, a voltage is not applied from a Vcc line 14 but directly from the Vcc power source connecting area 12. When the voltage from the Vcc power source connecting area 12 is applied directly to the bases of the transistors Q1-Q4, no variance is generated in an output voltage of data outputting circuits D01-D04, comparing with the case when the voltage is supplied from the Vcc line as usual, and also, the output voltage rises by a portion for causing no voltage drop in the Vcc line, and moreover a wiring for connecting the Vcc line 14 and the data outputting circuits D01-D04 is not required.</p>
申请公布号 JPS62200416(A) 申请公布日期 1987.09.04
申请号 JP19860041483 申请日期 1986.02.28
申请人 FUJITSU LTD 发明人 NAGAHARA MASAKI;MAKI YASUHIKO;YAMADA KATSUYUKI
分类号 G06F1/26;G06F1/00;G11C11/34;G11C11/413 主分类号 G06F1/26
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