| 摘要 |
PURPOSE:To perform patternings of metallic layers into the same shape with good accuracy by a method wherein the lower layer metal is applied for anodic formation in electrolyte with films at the time of etching the upper layer metal as the mask. CONSTITUTION:Contact windows 6, 7, and 8 are opened, after a P type base 2, an N type emitter 3, and an N type collector 4 are provided on an N type Si wafer 1 and covering them with an insulation film 5. Next, a barrier metal layer 9 and an Al layer 10 are formed, then the photo resist 11 for wiring formation is formed, and the Al layer 10 is dry etched. Then, with the photo resist 11 as the mask, anodic formation is performed in the electrolyte, and accordingly the barrier metal layer 9 is converted into an oxide layer 12, and the side surfaces of the Al layer 10 into alumina 13. Finally, the photo resist 11 is removed, and thus the same pattern wirings of layer formed metal of the Al layer 10 and the barrier metal 9 which are separated by metal oxides 12 and 13 are obtained. |
