发明名称 THICK FILM INTEGRATED CIRCUIT
摘要 PURPOSE:To prevent deterioration of bonding strength between wire and bonding pad by forming a bonding pad on a thick film to which a wire is connected on the through hole. CONSTITUTION:A wiring layer 2 of lower layer is formed on a ceramic substrate 1. Then, a through hole 4 is formed by an insulating layer 3 at the position where a bonding pad 5 is formed. Thereafter, a bonding pad 5 is formed on the through hole 4. Thereby, a bonding pad 5 is formed as a recess. A thick film integrated circuit thus produced is capable of preventing deterioration of bonding strength of wire because a sufficient pressure is applied to the wire at the time of wire bonding.
申请公布号 JPS58201335(A) 申请公布日期 1983.11.24
申请号 JP19820084341 申请日期 1982.05.19
申请人 NIPPON DENKI KK 发明人 MURAKAMI MASAHIDE
分类号 H05K3/34;H01L21/60;H01L27/15;H05K3/40;H05K3/46 主分类号 H05K3/34
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