| 摘要 |
PURPOSE:To prevent the deterioration of electric characteristics generating on the interface between insulating materials by a method wherein, when a P-N junction is formed on the island-formed region of a semiconductor, while said P-N junction is formed in such a manner that is does not come in contact with the insulating materials. CONSTITUTION:An oxide film 31 is formed by oxidizing an Si substrate 30 and a polycrystalline Si layer is formed thereon. Then, a polycrystalline Si island-formed region, which is surrounded by a base oxide film 31 and a selective oxide film 33, is formed by performing a selective oxidization on the polycrystalline Si layer, and a single crystal Si island region 36 is obtained by single-crystallizing said island region. Subsequently, a P type region is formed by selectively implanting a boron ion, for example, in such a manner that the ion is not come in contact with the interface of the region 36 and the film 33. Through these procedures, a P-N junction contacting with the region 36 is formed without having a region 50 to come in contact with the film 33. As the P-N diode, having the above-mentioned construction, is completely isolated from the other elements using an insulating material and, at the same time, as the P-N junction is isolated from the insulating material, the leakage current on the interface of insulating materials can be removed, thereby enabling to obtain excellent electric characteristics for the titled semiconductor device. |
