发明名称 INTEGRATED CIRCUIT AND DYNAMIC RANDOM ACCESS MEMORY INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To minimize damage to a substrate being subjected to fuse operation and to reduce the fuse pitch, by arranging a screening part where a laser fuse link is set by laser beams so that the damage of laser induction from laser beams is minimized at a region below the screening part. SOLUTION: A dynamic access memory integrated circuit has a plurality of screening parts 402, 404, 406, and 408 located on the lower side of laser fuse links 202, 204, 206, and 208. The screening parts are constituted so that a first regions located on the lower side of the screening parts can be essentially minimized when the first laser fuse links are set by laser beams. The screening part is formed by a material for reflecting nearly entire laser energy applied the screening part. A reflection material such as tungsten, molybdenum, platinum, chromium, titanium, and their alloys operates favorably.
申请公布号 JPH11154739(A) 申请公布日期 1999.06.08
申请号 JP19980258425 申请日期 1998.09.11
申请人 SIEMENS AG;INTERNATL BUSINESS MACH CORP <IBM> 发明人 WEIGAND PETER;KIEWRA EDWARD W;NARAYAN CHANDRASEKHAR;ARNDT KENNETH C;LACHTRUPP DAVID;GILMOUR RICHARD ALFRED;PALAGONIA ANTHONY MICHAEL
分类号 H01L21/82;H01L21/8242;H01L23/525;H01L27/108;(IPC1-7):H01L27/108;H01L21/824 主分类号 H01L21/82
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