发明名称 |
MAGNETRON CATHODE SPUTTERING SYSTEM |
摘要 |
Such a system comprises in an envelope 1 a flat cathode 2 from the material to be sputtered and a substantially circular anode situated coaxially with respect to said cathode. Behind the cathode, magnetic means 13 are provided to generate at least one closed tunnel of field lines 14 over a part of the cathode surface (a so-called electron trap). Between the anode 3 and the edge 8 of the cathode is present according to the invention a coaxial, substantially cylindrical auxiliary electrode 15. From the center of the cathode a rod-shaped auxiliary electrode 16 moreover extends axially. Said auxiliary electrodes 15 and 16 modify the electric field in such a manner that the electrons which are not captured in the tunnel of magnetic field lines are directed substantially towards the anode 3. The distance from the rod-shaped electrode 16 to the substrate 7 must be chosen to be comparatively small. By using the invention the substrate is less heated and not so much damaged by electron bombardment. |
申请公布号 |
AU1468283(A) |
申请公布日期 |
1983.11.24 |
申请号 |
AU19830014682 |
申请日期 |
1983.05.19 |
申请人 |
PHILIPS: GLOEILAMPENFABRIEKEN N.V. |
发明人 |
JACOBUS EDUARDUS CROMBEEN;JAN UISSER;GARY EVAN THOMAS |
分类号 |
C23C14/36;C23C14/35;H01J37/34 |
主分类号 |
C23C14/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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