| 摘要 |
PURPOSE:To obtain the microscopic gate electrode using Al by a method wherein a poly Si layer is arranged on the region where the gate electrode will be formed, an SiO2 wall is formed on the side face, said poly Si is removed, a metal is vapor-deposited, and the gate electrode is provided together with a source and drain electrode. CONSTITUTION:A poly Si 3 and an Si3N4 are laminated on the SiO2 film 2 located on a P type Si substrate 1, and layers 3 and 4 are plasma-etched using a resist mask 5. On the layer 4, a slight side-face etching is performed. The resist mask 5 is removed, a wet oxidization is performed, an SiO2 wall 6 is formed, and an N<+> layer 7 is provided by performing an ion implantation. Then, after a connection hole 8 has been provided, the Si3N4 and the poly Si 3 are removed by performing a plasma etching. When Al is vapor-deposited on the above and electrodes 9 and 10 are provided, the electrode 10 is completely isolated by the wall 6, and a microscopic electrode pattern can be formed by performing a simple process using Al for which performance of microscopic working is difficult. |
