| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a field emission type electron source having stability, redundancy and a high electric current value by applying ultrafine particles on a film being an emitter material, and working the emitter material in an emitter shape by using the applied ultrafine particles as an etching mask. SOLUTION: A hard bake is performed by applying a photoresist 2 on a glass or Si substrate 1. Afterwards, a solvent containing particulates 3 is applied on a hard bake resist 2 by a spin coat by agitating it by putting SiO2 particles having the particle size of a diameter of about 0.11μm in ethanol. Next, ultrafine silica 3 is used as a mask of etching after performing dry etching by O2 . Therefore, a carbon material 2 under the ultrafine silica 3 remains to become a conical shape. Afterwards, the ultrafine silica 3 is removed by dry etching. The photoresist 2 is worked in an emitter shape by reducing resistance by implanting an Ar ion by rounding the tip by dry etching.
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