| 摘要 |
PURPOSE:To obtain the titled semiconductor device of high efficiency and reliability by a method wherein a source and drain region is formed by having a Schottky junction between a metal or metal silicide and Si, and the gate electrode side of the source region is surrounded by an impurity layer. CONSTITUTION:A PtSi gate electrode 104 is provided on an SiO2 film 103 of the region isolated by an SiO2 102 on an N type Si substrate, and a B-ion is implanted using a selective mask of resist 105. A P<+> type layer 106 is formed by performing a heat treatment, an aperture is provided on the film 103, and a film 107 is left. A CVD SiO2 is covered on the above, a reactive ion etching is performed, and an SiO2 film 108' is left on the side face of the electrode 104. Then, a Pt film 109 is vapor-deposited, and PtSi layers 110 and 111 are formed by performing a heat treatment in N2. Subsequently, excluding the non-reactive Pt film 109, an SiO2 film 112 is covered and an Al electrode is attached. As the source and drain region is formed by performing a Schottky junction between the PtSi layers 110 and 111 and the Si substrate 101, the lowering of the inversion voltage generating on the part in the vicinity of the drain region can be suppressed, and the decrease in threshold voltage can also be prevented, thereby enabling to obtain the semiconductor device of high efficiency and integration. |
