发明名称 |
Fault-tolerant circuitry for semiconductor memory. |
摘要 |
<p>A semiconductor memory with a spare row (11) or column added to a memory array, comprising a substitution circuit which, in the presence of an address input appointing a defective selecting line, drives a spare selecting (WLS) line in place of regular selecting lines (WL). In order to disable all the regular selecting lines (WL) a drive pulse (0x) to be impressed on drivers (WD) for these selecting lines (WL) is cut off.</p> |
申请公布号 |
EP0094645(A2) |
申请公布日期 |
1983.11.23 |
申请号 |
EP19830104747 |
申请日期 |
1983.05.13 |
申请人 |
HITACHI, LTD. |
发明人 |
SHIMOHIGASHI, KATSUHIRO;KAWAJIRI, YOSHIKI;HORIGUCHI, MASASHI;MIYAZAWA, KAZUYUKI;ISHIHARA, MASAMICHI |
分类号 |
G11C29/00;G11C29/04;(IPC1-7):06F11/20 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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