发明名称 Fault-tolerant circuitry for semiconductor memory.
摘要 <p>A semiconductor memory with a spare row (11) or column added to a memory array, comprising a substitution circuit which, in the presence of an address input appointing a defective selecting line, drives a spare selecting (WLS) line in place of regular selecting lines (WL). In order to disable all the regular selecting lines (WL) a drive pulse (0x) to be impressed on drivers (WD) for these selecting lines (WL) is cut off.</p>
申请公布号 EP0094645(A2) 申请公布日期 1983.11.23
申请号 EP19830104747 申请日期 1983.05.13
申请人 HITACHI, LTD. 发明人 SHIMOHIGASHI, KATSUHIRO;KAWAJIRI, YOSHIKI;HORIGUCHI, MASASHI;MIYAZAWA, KAZUYUKI;ISHIHARA, MASAMICHI
分类号 G11C29/00;G11C29/04;(IPC1-7):06F11/20 主分类号 G11C29/00
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