发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device whereby the manufacturing and assembling are easy. SOLUTION: A semiconductor substrate is adhered to a support plate, an anode layer 1 is exposed, a mask film is formed on the anode layer 1, other part than a semiconductor device-forming region is etched to form a recess, the mask film is removed, a low-m.p. glass is filled in the recess so as to surround the semiconductor device-forming region, an anode electrode 10 and cathode electrode 12 connected to the anode layer 1 and cathode layer 3 at the semiconductor device-forming region are formed and low-m. p. parts between the semiconductor devices are cut off to complete the semiconductor devices.</p>
申请公布号 JPH11233850(A) 申请公布日期 1999.08.27
申请号 JP19980051507 申请日期 1998.02.16
申请人 NEW JAPAN RADIO CO LTD 发明人 HISAMORI BUNJI
分类号 H01L47/02;(IPC1-7):H01L47/02 主分类号 H01L47/02
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