| 摘要 |
Soft errors in semiconductor devices, e.g. random access memories, arising from the bombardment of the device by alpha particles produced by the disintegration of minute traces of uranium or thorium in the packaging materials are be prevented by coating the active surface 12 of the semiconductor chip with a thin layer 17, e.g. 20 to 100 microns, of an organic polymeric material, this layer 17 being of sufficent thickness to absorb the particles. Typically, the polymer is a poly-imide formed by u.v. electron-beam or thermal curing of liquid monomer applied to the chip surface. <IMAGE> |
