Ion implanter for oxygen ion implantation into a silicon wafer

摘要

An ion implanter has an electron beam irradiation system which removes impurity ions generated by an electron source. An ion implanter comprises a system for directing a beam (100) from an ion beam generator source (34) towards a wafer (26), a system for transforming electrons generated by an electron source (50) into an electron beam (102), and an electron beam irradiation system for separating the electron beam (102) from an associated impurity ion beam generated by the electron beam generator system.