| 摘要 |
A method for producing a Group II-VI compound semiconductor crystal containing a Group VI element other than Te by a temperature-difference method for growing the crystal from a solution containing Te, the Group VI element and a Group II-VI compound crystal source where Te is used as a major component of a solvent and the crystal is grown at a relatively low temperature by maintaining the vapor pressure of the VI group element at a predetermined value. This method can form a practical p-n junction by using two solutions, one containing a p-type additive and the other an n-type additive, and contacting a substrate successively with each of the solutions for a predetermined time length. |
