发明名称 |
Method for determination of resistivity of N-Type silicon Epitaxial layer |
摘要 |
<p>A method for the determination of the resistivity of an n-type epitaxial layer formed on a silicon substrate is disclosed. This invention resides in either directly determining the true resistivity of a sample by preparing this sample without a natural oxide film which is responsible for the change with the passage of time or indirectly determining the true resistivity of a sample by intentionally forming on the sample a natural oxide film so stable to defy the change with the passage of time and measuring resistivity of this sample. <IMAGE></p> |
申请公布号 |
EP0634790(B1) |
申请公布日期 |
1999.10.06 |
申请号 |
EP19940305081 |
申请日期 |
1994.07.12 |
申请人 |
SHIN-ETSU HANDOTAI COMPANY LIMITED |
发明人 |
MITANI, KIYOSHI;SAISU, SHIGENORI;SUMIYA, HIROSHI;KATAYAMA, MASATAKE |
分类号 |
G01N27/04;G01R27/02;G01R27/14;H01L21/66;(IPC1-7):H01L21/64 |
主分类号 |
G01N27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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