发明名称 CLEANING METHOD FOR SEMICONDUCTOR WAFER
摘要 PURPOSE:To realize an ultra-clarifying and washing process, through which minute foreign matters of approximately 0.1mum are not attached, with excellent reproducibility by washing a wafer by water, immersing it in an immersion liquid consisting of a liquid having high solubility to water and drying it by steam while ultra-filtering the immersion liquid at all times. CONSTITUTION:The Si specular wafer 1 is etched by a composition etching liquid, replaced instantaneously with a deionized pure water, and washed by flowing water. The wafer 1 is immersed instantaneously in an immersion tank 5 into which isopropyl alcohol 4 is entered after washing by water, and trnsferred to a steam drier 6. Isopropyl alcohol flows into a temporary reservoir 8 through a cartridge filter 7 and is pressured by a pump 9, and passes through ultrafilter membranes 10 utilizing polyimide films and returns to the immersion tank 5. On the other hand, foreign matters and high molecular substances in isopropyl alcohol are obstructed by the ultrafilter membranes 10, and thrown away to the outside through a concentrated-liquid discharge port 11. A Daiflon solvent 12 is stored to the lower section of the steam drier 6 as a drying treating liquid, and heated, and the wafer 1 is exposed to the vapor of the treating liquid 12.
申请公布号 JPS58200540(A) 申请公布日期 1983.11.22
申请号 JP19820083004 申请日期 1982.05.19
申请人 HITACHI SEISAKUSHO KK 发明人 SUZUKI MICHIO;HASHIMOTO NAOTAKA
分类号 B01D61/14;H01L21/304;(IPC1-7):01L21/304 主分类号 B01D61/14
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