Semiconductor integrated circuit with vertical implanted polycrystalline silicon resistor

摘要

Integrated circuit resistor elements which may be used as load devices in static MOS RAM cells are created vertically in polycrystalline silicon ion implanted to provide the desired resistivity. The method of making these devices is compatible with a standard self-aligned N-channel silicon-gate process. The cell size is reduced as the resistors can overly other elements, and an efficient layout provides a very small cell area.