| 摘要 |
PURPOSE:To obtain the easy mask for X-ray lithography in a manufacturing process by forming a carbon film onto an X-ray mask substrate. CONSTITUTION:A SiN film 2 is formed onto a Si wafer 1. The carbon film 9 as a plating base is E gun-evaporated onto the SiN film. A polyimide film 4 is applied, and cured. An electron-beam drawing resist is applied, and resist patterns 5 are formed through exposure by electron beams. Ti 6 Is evaporated onto the whole surface in order to form an intermediate mask for etching polyimide. The resist is removed through a lift-off process, and a Ti mask is formed. Polyimide is etched while using Ti as a mask through an oxygen ion-beam etching. An X- ray absorber pattern made of Au is formed. A polyimide pattern is removed, the back of the Si wafer is etched lastly, and the X-ray mask is completed. The carbon film remains on the substrate, but the remaining can be ignored on practical use because the transmittance of the carbon film is higher than that of an Au film. |
