发明名称 TRANSISTOR STACK
摘要 PURPOSE:To unnecessitate a special protection circuit for the prevention of breakdown of a transistor due to surge voltage by a method wherein the electrode which connects transistors and diodes is made as shortest as possible. CONSTITUTION:The diode D1, the first collector electrode 1, and the first transistor TR1 are successively arranged, and the second transistor TR2, the second emitter electrode 4, and the second diode D2 are successively arranged resulting in the formation of two arrays of elements, then interposed by the second collector electrode 3 and the first emitter electrode 2, thereby an electric circuit is constituted and interposed by insulators 5a and 5b and check plates 6a and 6b. Since the electrode 2 or the electrode 3 is made as shortest as possible, the floating inductance existing by distribution in the electrode 2 the part for new current flow can be reduced to the degree of neglect, when the transistor TR1 turns off for example, and therefore the surge voltage generated in the electrode 2 can be restrained.
申请公布号 JPS58200562(A) 申请公布日期 1983.11.22
申请号 JP19820083392 申请日期 1982.05.18
申请人 MITSUBISHI DENKI KK 发明人 AMITANI HISAO;KONDOU AKIO
分类号 H01L25/10;H01L23/62;H01L25/18;H02M3/155 主分类号 H01L25/10
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