| 摘要 |
PURPOSE:To solve the problem of the deterioration of image by preventing the spill-down of signal charges on the way of transfer by a method wherein the pinch-off potential VP of a lead gate part is formed sufficiently lower than the pinch-off potential VP of a transition region, in an IL-CCD (interline system CCD). CONSTITUTION:The accumulation region 2 and the transition region 4 of a CCD transfer line 1 are formed of an impurity having conductivity type reverse to that of a semiconductor substrate 3, and the impurity density of the transition region 2, and the regions are shallow. Thereby, the pinch-off potential VP is smaller than that of the accumulation region. The gate channel part 8 of an MOS transistor A which reads the signal charges into the accumulation part 2 from an accumulation diode 7 formed of the diffused layer of an impurity having conductivity type reverse to that of the semiconductor substrate 3 is depletion type, and the impurity density of the channel part has the same conductivity type as the density of the transition region 4, and the part is formed shallow with a density lower than the region. Therefore, the pinch-off potential VP is smaller than that of the transition region 4. |
